overextension

用法例句

The principle of lateral epitaxial overgrowth GaN thin film with MOCVD was introduced.

介绍了金属有机化学气相沉积(Metal-Organic Chemical Vapor Deposition,MOCVD)法横向外延过生长GaN薄膜的原理,阐述了该技术形成选择生长和减少GaN薄膜缺陷密度的机理。

In Situ monitoring of Epitaxy Growth by Differential RHEED under High Pressure;

高压强下外延生长的差分RHEED原位监测

New Progress in wafer epitaxy technologies for high-brightness white LEDs;

高亮度白光LED用外延片的新进展

Growth and characterization of GaN by lateral epitaxy overgrowth (LEO);

GaN材料的横向外延过生长(LEO)及其特性研究

The growth processes of liquid-phase epitaxy will be discussed in some detail, as crystal growth is a necessary step for the realization of integrated optics using.

再略为详细地讨论液相外延生长过程，因为晶体生长是实现集成光路使用的必不可少的一个环节。

Study on Energetic Deposition and Heteroepitaxial Behavior by Moleculer Dynamics Simulation;

载能沉积过程与异质外延生长行为的分子动力学模拟研究

Lateral epitaxial overgrowth GaN thin film with MOCVD

MOCVD法横向外延过生长GaN薄膜

Study of Epitaxial Lateral Overgrowth of Gallium Nitride on Sapphire by MOCVD;

蓝宝石衬底MOCVD横向外延过生长GaN薄膜的研究

epitaxial CVD growth

外延化学气相沉积生长

delay allowance

延误外加时间;容许延迟;过程空裕;时延容许量

Effects of Time-Delay and Cross-Correlated Noises on the Tumor Cell Growth Process;

交叉关联噪声与时间延迟对肿瘤细胞生长过程的影响

Stationary Probability and Extremum Distribution in Logistic Growth Process with Small Time Delay

具有小延时反馈的逻辑生长过程中的稳态概率与极值分布

The union leader is trying to buy time by prolonging the negotiation

工会的领袖企图以延长谈判过程来拖延时间

The union leaders are trying to buy time by prolonging the negotiations.

工会的领袖企图以延长谈判过程来拖延时间.

The engineers carried the highway across the marshland.

工程师们把公路延长通过沼泽地带。

draw out a discussion or process in order to gain time.

延长讨论或过程以便赢得时间。

The development of this theory has been a long process.

这个理论的推延是一个漫长的过程。

epitaxial diffused-mesa transistor

外延生长扩散台面式晶体管

epitaxial diffused-junction transistor

外延生长扩散结式晶体管

SOI Compliant Substrate for GaN Epitaxial Growth;

GaN外延生长中的SOI柔性衬底技术研究

Study of GaN Epitaxial Growth on Si-based Micro Structures;

硅基微结构上的GaN外延生长研究

Preliminary Study on the Growth of AIN Thin Film by Molecular Beam Epitaxy;

分子束外延生长AIN薄膜的初步研究